MT4600 datasheet, mosfet equivalent, MT Semiconductor

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Features and benefits

* N-Channel 30V/5A, RDS (ON) = 28mΩ (max.) @ VGS =4.5V RDS (ON) = 38mΩ (max.) @ VGS =2.5V
* P-Channel -30V/-4.6A, RDS (ON) = 63mΩ (max.) @ VGS =-4.5V RDS (ON) = 8.

Application

where low in-line power loss and fast switching are required. $SSOLFDWLRQV '&'&SULPDUEULGJH '&'&6QFKURQRXVU.

Description

These dual N and P-Channel enhancement mode power field effect transistors are produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching .

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